Broadband-pass filter structure based on 5G millimeter wave communication

The invention provides a broadband pass filter structure based on 5G millimeter wave communication. The filter structure comprises a substrate comprising a semiconductor substrate, a first metal layer and a second metal layer, the semiconductor substrate is provided with a first surface and a second...

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Bibliographic Details
Main Authors FAN GUANGJI, WANG CHENGMENG
Format Patent
LanguageChinese
English
Published 22.09.2023
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Summary:The invention provides a broadband pass filter structure based on 5G millimeter wave communication. The filter structure comprises a substrate comprising a semiconductor substrate, a first metal layer and a second metal layer, the semiconductor substrate is provided with a first surface and a second surface which are opposite, the first metal layer is located on the first surface, and the second metal layer is located on the surface of the side, away from the semiconductor substrate, of the first metal layer; the surface, covered with the second metal layer, of the first metal layer is provided with a first exposed area; the resonators are all located on the partial surface of the side, away from the first metal layer, of the second metal layer, the resonators are sequentially coupled and connected, and the surface, covered with the resonators, of the second metal layer is provided with a second exposed area; the two open-circuit stubs are located on the side, provided with the resonators, of the substrate, a
Bibliography:Application Number: CN202310774407