Light emitting diode and light emitting device

• Main Authors: ZANG YASHU, ZHANG ZHONGYING, CHEN SIHE, LONG SIYI, JIANG BIN, ZENG WEIJUN
• Format: Patent
• Language: Chinese; English
• Published: 22.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode which comprises a substrate, an epitaxial structure, a first contact electrode, a second contact electrode and a first metal structure, the epitaxial structure is located on the upper surface of the substrate and comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, a first groove penetrates from the second semiconductor layer to the first semiconductor layer, and a second groove penetrates from the second semiconductor layer to the second semiconductor layer. The second groove extends from the first semiconductor layer to the substrate, the first semiconductor layer is provided with a first side wall at the second groove, the first contact electrode at least covers part of the first side wall, the second contact electrode is located on the epitaxial structure and electrically connected with the second semiconductor layer, and the first metal structure covers the first contact electrode and th