Semiconductor device

• Main Authors: MENG RUIXIAN, PARK KI-JONG, PARK IM-SU, LEE KISEOK, KIM IN-SOO, REN SUIBIN
• Format: Patent
• Language: Chinese; English
• Published: 19.09.2023
• Subjects: ELECTRICITY

A semiconductor device may include: first columnar insulating patterns on a substrate extending in a vertical direction, spaced apart in a first direction and arranged in a row; second columnar insulating patterns on the substrate extending in the vertical direction, spaced apart in the first direction and arranged in rows, the second columnar insulating patterns and the first columnar insulating patterns overlapping each other in a second direction perpendicular to the first direction; silicon patterns stacked on the substrate to be spaced apart in the vertical direction, extending in the second direction and located between the two first columnar insulation patterns and the two second columnar insulation patterns; word lines on each of the upper and lower surfaces of each silicon pattern, extending in the first direction, contacting sidewalls of at least one of the first and/or second columnar insulating patterns; a bit line contacting a first sidewall of at least a first silicon pattern of the silicon patt