Memory element

• Main Authors: CHAE JIN WOO, CHEN YUPIN
• Format: Patent
• Language: Chinese; English
• Published: 19.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides a memory element having a word line of dual conductive material. The memory element has a semiconductor substrate having an active region defined by a surface adjacent to the semiconductor substrate, where the semiconductor substrate has a recess extending from the surface into the semiconductor substrate; and a word line disposed within the recess wherein the word line has a first isolation layer disposed within the recess and conformal to the recess, a first conductive element surrounded by the first isolation layer and disposed within the recess, a second isolation layer disposed within the recess and conformal to the recess, and a second conductive element surrounded by the second isolation layer and disposed within the recess. The second isolation layer is disposed conformal to the first isolation layer and the first conductive element, and the second conductive element is disposed adjacent to the first conductive element and surrounded by the second isolation layer. 本公开提供