Semiconductor device

• Main Authors: KANG YUN-GOO, KANG SANG MIN, SEO CHANG-WOO, LEE DA-IN, PARK KYUNG-WOOK, SONG SOO-YEON
• Format: Patent
• Language: Chinese; English
• Published: 12.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device may include contact plug structures on a substrate and an insulating structure filling a space between the contact plug structures to insulate the contact plug structures from each other. The contact plug structures may be spaced apart from each other in a first direction. The insulating structure may include a first insulating pattern and a second insulating pattern. The second insulating pattern may include an insulating material having an etch selectivity with respect to silicon oxide. The first insulation pattern may contact a portion of a sidewall of the second insulation pattern and a portion of a sidewall of the contact plug structure. The first insulation pattern may include a material having a band gap higher than that of the second insulation pattern. 一种半导体器件可以包括位于衬底上的接触插塞结构以及填充所述接触插塞结构之间的空间以使所述接触插塞结构彼此绝缘的绝缘结构。所述接触插塞结构可以在第一方向上彼此间隔开。所述绝缘结构可以包括第一绝缘图案和第二绝缘图案。所述第二绝缘图案可以包括相对于氧化硅具有蚀刻选择性的绝缘材料。所述第一绝缘图案可以接触所述第二绝缘图案的侧壁的一部分和所述接触插塞结构的侧壁的一部分。所述第一绝缘图案可以包括带隙高于所述第二绝缘图案的带隙的材料。