Method and system for semiconductor device metrology and detection

• Main Authors: BARAK GILAD, LINDENFELD, ZEE, EV, HAINICK, YAIR, LEVANT BORIS, SHAFIR DROR, HILLMAN YURI, SCHLEIFER ELAD, AMA MICHAEL, FERBER, SMADAR
• Format: Patent
• Language: Chinese; English
• Published: 12.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

The invention relates to a method and system for semiconductor device metrology and detection. The method for semiconductor device metrology includes: creating a time domain representation of wavelength domain measurement data of light reflected by a patterned structure of a semiconductor device; selecting an earlier time portion of the time domain representation excluding the later time portion of the time domain representation; and determining one or more measurements of one or more parameters of interest of the patterned structure by performing a model-based process using a temporally earlier portion of the time domain representation. 本申请涉及用于半导体器件计量以及检测的方法和系统。该用于半导体器件计量的方法，包括：创建由半导体器件的图案化结构反射的光的波长域测量数据的时域表示；选择排除了时域表示的时间较晚部分的时域表示的时间较早部分；以及通过使用时域表示的时间较早部分执行基于模型的处理来确定图案化结构的一个或多个感兴趣参数的一个或多个测量。