Preparation method and application of perovskite thin film

The invention discloses a preparation method of a perovskite thin film. The preparation method comprises the following steps: S1, preparing a perovskite precursor solution; s2, preparing a pretreated perovskite thin film by using the perovskite precursor solution; s3, pre-annealing the pre-treated p...

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Bibliographic Details
Main Authors WANG YULONG, NING XULI, HOU FUHUA, REN XIAOQI, GUO HAIKUO
Format Patent
LanguageChinese
English
Published 08.09.2023
Subjects
ELECTRICITY
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Summary:The invention discloses a preparation method of a perovskite thin film. The preparation method comprises the following steps: S1, preparing a perovskite precursor solution; s2, preparing a pretreated perovskite thin film by using the perovskite precursor solution; s3, pre-annealing the pre-treated perovskite thin film at 80-130 DEG C for 1-2 min, immediately transferring the pre-treated perovskite thin film to a filter paper substrate on an annealing table at 100-180 DEG C, carrying out confinement annealing for 1-20 min with the film surface facing downwards, turning the perovskite thin film back, enabling the film side to face upwards, and continuously annealing for 1-20 min at 100-180 DEG C so as to ensure that the solvent is completely evaporated; and naturally cooling the film to obtain the perovskite film. According to the invention, the surface-down near-space annealing process is adopted, and the volatilization of the perovskite solvent is accurately controlled. The method is beneficial to regulation
Bibliography:Application Number: CN202310686942