Semiconductor slicing device with adjustable thick layer transfer

• Main Authors: WANG ZHIJUN, XU HUSHAN, ZHAN WENLONG, WANG FENGFENG, CHOI MYUNG-HWAN, HE YUAN, CHEN WEILONG, SHEN TIELONG, LIU LUBEI, DOU WEIPING, CHEN YOUXIN, HU ZHENGGUO, WANG ZHIGUANG
• Format: Patent
• Language: Chinese; English
• Published: 05.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PERFORMING OPERATIONS; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

The invention relates to a thick layer transfer adjustable semiconductor slicing device. The device comprises an ion source; the accelerator is connected with the ion source through a low-energy transmission line; the beam regulation and control system comprises a focusing magnet, a beam diagnosis element, a single-unit radio frequency cavity or a multi-unit radio frequency cavity, a scanning magnet or a high-order magnet and a beam scraping device which are sequentially arranged at intervals from the beam input end to the beam output end; and the beam coupling terminal is connected with the beam regulation and control system through a beam transmission line, and the beam coupling terminal is used for carrying a semiconductor material and simultaneously realizing coupling injection and monitoring with an ion beam output by an upstream accelerator. The radio frequency high-current continuous wave linear accelerator technology is used for semiconductor slicing, the semiconductor slice yield can be effectively i