Plasma processing method and plasma processing apparatus

• Main Authors: GUO SHIRONG, KON YOSHIMITSU, SASAKI HIKOICHIRO, IKEDA TAKENOBU
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a plasma processing method comprising the steps of: a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film on a substrate support within a plasma processing chamber; b) supplying a processing gas into the plasma processing chamber; c) periodically supplying a pulse voltage to the substrate support part; and d) periodically supplying RF power by which a plasma is generated from the process gas to etch the silicon-containing film, the pulse voltage having a negative polarity, a first period in which a first pulse voltage is supplied is repeated with a second period in which the pulse voltage having the negative polarity is not supplied or a second pulse voltage having a smaller absolute value than the first pulse voltage is supplied; a third period in which a first RF power is supplied is repeated with a fourth period in which the RF power is not supplied or a second RF power smaller than the first RF power is supplied, and the first pe