Six-order double-layer high-selection SIW filter based on through-silicon-via technology

• Main Authors: WANG FENGJUAN, YANG ZHUOYU, ZHU ZHANGMING, YU NINGMEI, YANG YUAN, YOON SANG-GON
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRICITY; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE; WAVEGUIDES

The invention discloses a six-order double-layer high-selection SIW filter based on a silicon through hole technology, an RDL metal layer I, an RDL metal layer II and an RDL metal layer III are sequentially arranged from top to bottom, a first-layer filter structure is arranged between the RDL metal layer I and the RDL metal layer II, the first-layer filter structure is connected with a microstrip line feed input end, and the second-layer filter structure is connected with a microstrip line feed output end. A first-layer filter structure is arranged between the RDL metal layer I and the RDL metal layer II, a second-layer filter structure is arranged between the RDL metal layer II and the RDL metal layer III, the second-layer filter structure is connected with a microstrip line feed output end, each of the first-layer filter structure and the second-layer filter structure comprises three resonant cavities formed by TSV arrays, and two adjacent resonant cavities are magnetically coupled through windowing. The T