Method of forming semiconductor device structure

• Main Authors: JANG CHEOL HO, LIU YOURONG, LIN WENKAI, WU ZHENCHENG, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Embodiments of the present disclosure provide a method of forming a semiconductor device structure. In one embodiment, a method includes forming a fin structure having alternately stacked first semiconductor layers and second semiconductor layers, removing edge portions of the second semiconductor layers to form cavities between adjacent first semiconductor layers, selectively forming passivation layers on sidewalls of the first semiconductor layers, and selectively forming passivation layers on sidewalls of the second semiconductor layers. A dielectric spacer is formed on a sidewall of the second semiconductor layer and filled in the cavity, wherein the passivation layer is exposed. The method also includes removing the passivation layer and forming an epitaxial source/drain feature such that the epitaxial source/drain feature is in contact with the first semiconductor layer and the dielectric spacer. 本公开的实施例提供一种形成半导体装置结构的方法。在一个实施例中，方法包括形成具有交替堆叠的第一半导体层与第二半导体层的鳍片结构，移除第二半导体层的边缘部分以在相邻第一半导体层之间形成空腔，在第一半导体层的侧壁上选择性