Multi-polarization-state incidence microscopic Raman spectrum stress detection method and device

• Main Authors: WU BIWEI, MA JIE, TAN JIUBIN, WANG WEIBO
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2023
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention relates to a multi-polarization-state incidence microscopic Raman spectrum stress detection method and device for detecting micro-scale triaxial principal stress of semiconductor devices made of silicon materials and gallium arsenide materials, and belongs to the technical field of optical microscopic measurement. According to the invention, the simultaneous excitation and acquisition of longitudinal optical (LO) phonons and transverse optical (TO) phonons are realized by combining radial polarized light incidence under a high numerical aperture (NA) objective lens with an analyzer, and the independent excitation and acquisition of the LO phonons are realized by combining angular polarized light incidence under the high numerical aperture (NA) objective lens with the analyzer. According to the method, an independent excited LO peak under incidence of angular polarized light is taken as a prior signal, effective separation of a TO peak and an LO peak excited by incidence of radial polarized light