Manufacturing method of semiconductor transistor and semiconductor transistor

• Main Authors: LIN GUANXIAN, LI ZUO, WU HENG, WANG YANFENG, SHI XUEJIE, HUANG DA
• Format: Patent
• Language: Chinese; English
• Published: 29.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a manufacturing method of a semiconductor transistor and the semiconductor transistor, and the method comprises the steps: carrying out the imaging processing of a first dielectric layer between a source electrode contact hole and a drain electrode contact hole of the semiconductor transistor, so as to expose a second dielectric layer between a source electrode metal and a drain electrode metal; etching the second dielectric layer to form a first cavity; and depositing an insulating material in the first cavity, and sealing the first cavity to form an air gap. The stray capacitance between the source electrode and the grid electrode and between the drain electrode and the grid electrode in the semiconductor transistor is reduced by forming the air gaps, so that the performance of the semiconductor transistor is improved, and the overall performance of the circuit is improved. 本公开是关于一种半导体晶体管的制造方法和半导体晶体管，该方法包括：对半导体晶体管的源极接触孔与漏极接触孔之间的第一介质层进行图形化处理，以露出源极金属与漏极金属之间的第二介质层；刻蚀第二介质层，以形成第一空腔；在第一空腔