Semiconductor device

• Main Author: NISHIHATA MASAYOSHI
• Format: Patent
• Language: Chinese; English
• Published: 22.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention is provided with: a semiconductor substrate (200) provided with a main surface (200a), an electrode (210) provided in a first region (281) of the main surface, a voltage-resistant structure part (230) provided in a second region (283) different from the first region of the main surface, and an intermediate part (270) provided in a third region (282) between the first region and the second region of the main surface; a solder (310) provided on the electrode; and a metal wiring part (400) provided on the solder and having a non-infiltrated part (420) that is not infiltrated by the solder. The intermediate portion is less susceptible to solder infiltration than the electrode. The length of the intermediate portion in the direction in which the first region and the second region are arranged along the main surface is longer than the length of the non-infiltration portion in the direction in which the non-infiltration portion is arranged. 具有：半导体基板(200)，具备主面(200a)、设于主面的第1区域(281)的电极(210)、设于主面的与