Light emitting diode
The invention provides a light emitting diode, which comprises a semiconductor lamination layer; a first insulating layer having a series of first opening portions; the connecting electrodes are formed on the metal layer and comprise a first connecting electrode and a second connecting electrode, th...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
18.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a light emitting diode, which comprises a semiconductor lamination layer; a first insulating layer having a series of first opening portions; the connecting electrodes are formed on the metal layer and comprise a first connecting electrode and a second connecting electrode, the first connecting electrode surrounds the second connecting electrode, the first connecting electrode is electrically connected with the first semiconductor layer, the second connecting electrode is electrically connected with the metal layer, and the second connecting electrode is electrically connected with the second semiconductor layer. The first connecting electrode is provided with an outer edge close to the edge of the light emitting diode and an inner edge close to the second connecting electrode; the bonding pad electrode is formed on the connecting electrode and comprises a first bonding pad and a second bonding pad, the first bonding pad is electrically connected with the first connecting electrode, and |
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Bibliography: | Application Number: CN202211694028 |