Ultraviolet light-emitting diode with superlattice structure electron blocking layer

• Main Authors: HU GUOHUA, ZHANG XIONG, GAO YANI
• Format: Patent
• Language: Chinese; English
• Published: 11.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an ultraviolet light emitting diode with a superlattice structure electron barrier layer, which is provided with a substrate, an AlN buffer layer, an n-type AlGaN layer, a multi-quantum well active region, a BAlN/AlGaN superlattice structure electron barrier layer, a p-type AlGaN layer, a p-type GaN ohmic contact layer, an n-type electrode arranged on the n-type AlGaN layer and a p-type electrode arranged on the p-type GaN ohmic contact layer from bottom to top in sequence. In the ultraviolet light-emitting diode provided by the invention, the BAlN/AlGaN superlattice structure electron barrier layer is adopted to replace a p-type AlGaN electron barrier layer which is widely used at present, and the conduction band offset of the BAlN layer is increased and the valence band offset is reduced relative to the AlGaN layer in the active region, so that the ultraviolet light-emitting diode has the advantages of high light-emitting efficiency and high light-emitting efficiency. Therefore, on o