Superlattice array infrared detector chip and preparation method thereof
The invention discloses a superlattice array infrared detector chip and a preparation method, and belongs to the technical field of detector chips, the superlattice array infrared detector chip comprises an N-type GaSb substrate, a GaSb buffer layer, a superlattice array layer, a P-type InAs layer,...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
11.08.2023
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Abstract | The invention discloses a superlattice array infrared detector chip and a preparation method, and belongs to the technical field of detector chips, the superlattice array infrared detector chip comprises an N-type GaSb substrate, a GaSb buffer layer, a superlattice array layer, a P-type InAs layer, a first gold electrode, a second gold electrode, a first gold wire lead, a second gold wire lead and a readout circuit; a GaSb buffer layer is arranged on the N type GaSb substrate; a superlattice array layer is arranged on the GaSb buffer layer; a P-type InAs layer is arranged on one side, far away from the GaSb buffer layer, of the superlattice array layer; a first gold electrode is arranged on the GaSb buffer layer, and a second gold electrode is arranged on the P-type InAs layer; the first gold electrode is electrically connected with the reading circuit through a first gold wire lead, and the second gold electrode is electrically connected with the reading circuit through a second gold wire lead.
本发明公开了一种超晶格阵列 |
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AbstractList | The invention discloses a superlattice array infrared detector chip and a preparation method, and belongs to the technical field of detector chips, the superlattice array infrared detector chip comprises an N-type GaSb substrate, a GaSb buffer layer, a superlattice array layer, a P-type InAs layer, a first gold electrode, a second gold electrode, a first gold wire lead, a second gold wire lead and a readout circuit; a GaSb buffer layer is arranged on the N type GaSb substrate; a superlattice array layer is arranged on the GaSb buffer layer; a P-type InAs layer is arranged on one side, far away from the GaSb buffer layer, of the superlattice array layer; a first gold electrode is arranged on the GaSb buffer layer, and a second gold electrode is arranged on the P-type InAs layer; the first gold electrode is electrically connected with the reading circuit through a first gold wire lead, and the second gold electrode is electrically connected with the reading circuit through a second gold wire lead.
本发明公开了一种超晶格阵列 |
Author | ZHANG YING CHEN LONGHUA NIU XUELEI ZHANG PEIFENG SU YING CHAI YU ZHANG JUNJUN |
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DocumentTitleAlternate | 一种超晶格阵列红外探测器芯片和制备方法 |
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Snippet | The invention discloses a superlattice array infrared detector chip and a preparation method, and belongs to the technical field of detector chips, the... |
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Title | Superlattice array infrared detector chip and preparation method thereof |
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