Superlattice array infrared detector chip and preparation method thereof

• Main Authors: CHEN LONGHUA, CHAI YU, ZHANG YING, ZHANG JUNJUN, SU YING, ZHANG PEIFENG, NIU XUELEI
• Format: Patent
• Language: Chinese; English
• Published: 11.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a superlattice array infrared detector chip and a preparation method, and belongs to the technical field of detector chips, the superlattice array infrared detector chip comprises an N-type GaSb substrate, a GaSb buffer layer, a superlattice array layer, a P-type InAs layer, a first gold electrode, a second gold electrode, a first gold wire lead, a second gold wire lead and a readout circuit; a GaSb buffer layer is arranged on the N type GaSb substrate; a superlattice array layer is arranged on the GaSb buffer layer; a P-type InAs layer is arranged on one side, far away from the GaSb buffer layer, of the superlattice array layer; a first gold electrode is arranged on the GaSb buffer layer, and a second gold electrode is arranged on the P-type InAs layer; the first gold electrode is electrically connected with the reading circuit through a first gold wire lead, and the second gold electrode is electrically connected with the reading circuit through a second gold wire lead. 本发明公开了一种超晶格阵列