Semiconductor structures with resistors and capacitors, systems, and methods of forming same

• Main Authors: XIAO RUXIONG, LIN ZHENBIN, SUN JIE, HUANG YISHAN, CHEN BAIYING
• Format: Patent
• Language: Chinese; English
• Published: 08.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a structure and a method, and relates to a semiconductor structure with a resistor and a capacitor, a system and a method of forming the same, the semiconductor structure having a resistor structure and a metal-insulator-metal (MIM) capacitor structure formed by a single mask process. The semiconductor structure includes an interconnect structure on a substrate, a first insulating layer on the interconnect structure, first and second conductive plates on the first insulating layer and separated by a second insulating layer, a dielectric layer on the first conductive plate, and a third conductive plate on the dielectric layer. The bottom surfaces of the first and second conductive plates are coplanar. 本发明公开了一种结构和方法，涉及一种带有电阻器和电容器的半导体结构、系统及其形成方法，该半导体结构具有通过单掩模工艺形成的电阻器结构和金属-绝缘体-金属(MIM)电容器结构。半导体结构包括位于衬底上的互连结构、位于互连结构上的第一绝缘层、位于第一绝缘层上并由第二绝缘层分开的第一和第二导电板、位于第一导电板上的介电层和位于介电层上第三导电板。第一和第二导电板的底面是共面的。