Power semiconductor device with insulated trench gate electrode

A power semiconductor device (1) includes: a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22); a trench (4) extending in a vertical direction from the first main surface (21) into the semiconductor body (2), and an insulated tr...

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Bibliographic Details
Main Authors KNOLL LARS, ROMANO GIANFELICE, BELLINI MARCO
Format Patent
LanguageChinese
English
Published 01.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor device (1) includes: a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22); a trench (4) extending in a vertical direction from the first main surface (21) into the semiconductor body (2), and an insulated trench gate electrode (3) formed on the first main surface (21) and extending into the trench (4), in which the trench (4) is subdivided into a plurality of segments (41) along a main extension direction of the trench (4), the insulating trench gate electrode (3) continuously extends over the plurality of segments (41). 一种功率半导体器件(1)包括：沿竖直方向在第一主表面(21)与第二主表面(22)之间延伸的半导体本体(2)；沿竖直方向从第一主表面(21)延伸到半导体本体(2)中的沟槽(4)，并且指定了绝缘沟槽栅电极(3)，绝缘沟槽栅电极形成在第一主表面(21)上并且延伸到沟槽(4)中，其中，沟槽(4)沿着沟槽(4)的主延伸方向被细分为多个区段(41)，并且绝缘沟槽栅电极(3)在多个区段(41)上面连续地延伸。
Bibliography:Application Number: CN202180080867