Preparation method of doped blue light organic light-emitting diode
The invention provides a preparation method of a doped blue light organic light-emitting diode, which comprises an ITO anode glass plate, a light and thin hole injection layer is evaporated on the surface of the ITO anode glass plate, a hole transport layer is evaporated on the surface of the light...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a preparation method of a doped blue light organic light-emitting diode, which comprises an ITO anode glass plate, a light and thin hole injection layer is evaporated on the surface of the ITO anode glass plate, a hole transport layer is evaporated on the surface of the light and thin hole injection layer in vacuum, and a doped blue light subject-object common light-emitting layer is evaporated on the surface of the hole transport layer in vacuum. Two different electron transport layers are formed on the surface of the doped blue light host-guest common light-emitting layer through vacuum evaporation, and metal cathodes are formed on the surfaces of the electron transport layers through vacuum evaporation; according to the invention, the thermally activated delayed fluorescence material with the characteristic of reverse intersystem crossing is used as the material of the light-emitting layer, and the constituent elements are safe and pollution-free; the TADF material can generate a rev |
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Bibliography: | Application Number: CN202310551518 |