Three-dimensional semiconductor memory device, electronic system including same, and method of manufacturing same
A 3D semiconductor memory device, an electronic system including the 3D semiconductor memory device, and a method of manufacturing the 3D semiconductor memory device are disclosed. The 3D semiconductor memory device includes: lower selection lines extending in a first direction on a substrate and sp...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A 3D semiconductor memory device, an electronic system including the 3D semiconductor memory device, and a method of manufacturing the 3D semiconductor memory device are disclosed. The 3D semiconductor memory device includes: lower selection lines extending in a first direction on a substrate and spaced apart from each other in a second direction parallel to a top surface of the substrate and intersecting the first direction; an intermediate stack structure including electrode layers and electrode interlayer dielectric layers alternately stacked on the lower selection lines; upper selection lines extending in a first direction on the intermediate stack structure and spaced apart from each other in a second direction; and a first polishing stop layer disposed between the intermediate stack structure and the lower selection line. The first polishing stop layer includes a material different from a material of the electrode interlayer dielectric layer.
公开了3D半导体存储器件、包括该3D半导体存储器件的电子系统以及制造该3D半导体存储器件的方法。3D半导体存储器件包括:下 |
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Bibliography: | Application Number: CN202211640505 |