Three-dimensional semiconductor memory device, electronic system including same, and method of manufacturing same

• Main Authors: HAN JEE-HOON, JANG DONG-HYUK, SIM JAE-RYONG
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A 3D semiconductor memory device, an electronic system including the 3D semiconductor memory device, and a method of manufacturing the 3D semiconductor memory device are disclosed. The 3D semiconductor memory device includes: lower selection lines extending in a first direction on a substrate and spaced apart from each other in a second direction parallel to a top surface of the substrate and intersecting the first direction; an intermediate stack structure including electrode layers and electrode interlayer dielectric layers alternately stacked on the lower selection lines; upper selection lines extending in a first direction on the intermediate stack structure and spaced apart from each other in a second direction; and a first polishing stop layer disposed between the intermediate stack structure and the lower selection line. The first polishing stop layer includes a material different from a material of the electrode interlayer dielectric layer. 公开了3D半导体存储器件、包括该3D半导体存储器件的电子系统以及制造该3D半导体存储器件的方法。3D半导体存储器件包括：下