Semiconductor device

• Main Authors: CAO YONGCHENG, RYU HO-IN, JUNG HYUN-OK, SHIN DONG-HWA
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2023
• Subjects: ELECTRICITY

There is provided a semiconductor device that may include a substrate extending in a first direction and a second direction perpendicular to the first direction, the substrate including a memory cell region, a peripheral circuit region, and a boundary region between the memory cell region and the peripheral circuit region; first active patterns in the memory cell region, each of the first active patterns extending in a third direction inclined to the first direction; and a silicon dam structure in the boundary region. The silicon dam structure may include a silicon dam pattern including a trench line extending in an inclined direction and a dam isolation pattern in the trench line. 提供了一种半导体装置，所述半导体装置可以包括：基底，在第一方向和垂直于第一方向的第二方向上延伸，基底包括存储器单元区域、外围电路区域以及在存储单元区域与外围电路区域之间的边界区域；第一有源图案，在存储器单元区域中，第一有源图案中的每个在倾斜于第一方向的第三方向上延伸；以及硅坝结构，在边界区域中。硅坝结构可以包括包含在倾斜方向上延伸的沟槽线的硅坝图案和在沟槽线中的坝隔离图案。