Semiconductor device and forming method thereof

• Main Authors: CHEN YINGXUN, LIU TAOCHENG
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of forming the same are disclosed. The method includes forming a first conductive structure and a second conductive structure on a semiconductor substrate, forming one or more dielectric layers between the first conductive structure and the second conductive structure, covering the one or more dielectric layers with a first mask layer, forming a first opening in the first mask layer, and forming a second opening in the second mask layer. A conductive material is deposited in the first opening to form a field plate structure, and the field plate structure is electrically connected to another conductor. 揭露一种半导体装置及其形成方法，所述方法包含在半导体基板上形成第一导电结构和第二导电结构，在第一导电结构和第二导电结构之间形成一或多个介电层，以第一遮罩层覆盖一或多个介电层，在第一遮罩层中形成第一开口，在第一开口中沉积一导电材料以形成场板结构，并且电性连接所述场板结构至另一导体。