Preparation method of non-vacuum atomic layer deposition gallium oxide film

• Main Authors: XU JIAXUN, LIAN SHUIYANG, YUE XINXIANG, ZHU RUNFENG
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a preparation method of a non-vacuum atomic layer deposition gallium oxide film. The preparation method comprises a non-vacuum ALD process and a TMG + O3 process. A TMG liquid source is arranged in a stainless steel bottle, one end of the source bottle is connected with a spray head, and TMG steam is carried out through inert gas such as N2 and finally sprayed out through the spray head. Similarly, the O2 gas cylinder is connected with an O3 generator, the other end of the O3 generator is connected with a spray head, and when O2 passes through the O3 generator, ozone is generated and finally sprayed out through the spray head. The TMG nozzle and the O3 nozzle are separated by inert gas (such as N2), so that TMG and O3 are prevented from being mixed. Therefore, when a substrate moves back and forth below the nozzle, the gallium oxide film can be finally formed through the continuously formed Ga-O-Ga-... According to the method for preparing gallium oxide through non-vacuum ALD, the ALD