Memory management method, memory storage device and memory control circuit unit

The invention provides a memory management method, a memory storage device and a memory control circuit unit. The method comprises the following steps: starting a data integration operation and selecting a plurality of first-class entity units and a second-class entity unit from a rewritable nonvola...

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Bibliographic Details
Main Author YE YANCHEN
Format Patent
LanguageChinese
English
Published 25.07.2023
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention provides a memory management method, a memory storage device and a memory control circuit unit. The method comprises the following steps: starting a data integration operation and selecting a plurality of first-class entity units and a second-class entity unit from a rewritable nonvolatile memory module, wherein the data capacity of each first-class entity unit is smaller than that of each second-class entity unit; during a first execution period of data integration operation, copying first data from a first entity unit in a stable state in the plurality of first-class entity units to a second-class entity unit, and storing second data from the host system into a second entity unit which is not in the stable state in the plurality of first-class entity units. Therefore, the use efficiency of the first type of entity units can be effectively improved. 本发明提供一种存储器管理方法、存储器存储装置及存储器控制电路单元。所述方法包括：启动数据整并操作并从可复写式非易失性存储器模块中选择多个第一类实体单元与一个第二类实体单元，其中每一个第一类实体单元的数据容量小于每一个第二类实体单元的数据容量；在数据整并操作的第一执行期间，将第一数据从所述多个第
Bibliography:Application Number: CN202310463128