Preparation method of electrode for light-emitting diode

The invention provides a preparation method of an electrode for a light-emitting diode, which comprises the following steps: coating photoresist, manufacturing an electrode preparation hole and a plurality of heat insulation holes in the photoresist, the plurality of heat insulation holes being dist...

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Bibliographic Details
Main Authors WANG XINJIAN, ZHANG SHENGJUN, YIN XIAOXIAO, ZHANG SHUN, TAO YUYU
Format Patent
LanguageChinese
English
Published 21.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a preparation method of an electrode for a light-emitting diode, which comprises the following steps: coating photoresist, manufacturing an electrode preparation hole and a plurality of heat insulation holes in the photoresist, the plurality of heat insulation holes being distributed around the electrode preparation hole at intervals, the electrode preparation hole penetrating through the photoresist, and the heat insulation holes not penetrating through the photoresist; wherein the section shapes of the electrode preparation holes and the heat insulation holes in the vertical plane are trapezoidal; manufacturing a laminated electrode metal layer on the photoresist on which the electrode preparation hole and the plurality of heat insulation holes are formed, wherein the laminated electrode metal layer comprises a first part located on the photoresist and a second part located in the electrode preparation hole; the laminated electrode metal layer comprises a base layer and a wrapping lay
Bibliography:Application Number: CN202310303197