Measurement method of nano-micron non-contact in-situ optical thermal characterization technology combination
The invention discloses a measurement method of a nano-micron non-contact in-situ optical thermal characterization technology combination, and the method comprises the steps: employing an infrared thermal imaging mode for the thermal characterization application demands of a wide bandgap semiconduct...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
18.07.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a measurement method of a nano-micron non-contact in-situ optical thermal characterization technology combination, and the method comprises the steps: employing an infrared thermal imaging mode for the thermal characterization application demands of a wide bandgap semiconductor power device which is large in device size, is not high in measurement precision requirement, and is used for the qualitative evaluation of a main heat source region or thermal failure positioning; for thermal characterization application requirements of small device size, high measurement precision requirement and quantitative characterization of temperature distribution of wide-band-gap and ultra-wide-band-gap semiconductor power devices, a thermal reflection imaging mode and a Raman thermal characterization mode based on nanoparticles are adopted for a transverse structure device to characterize and measure the metal electrode temperature and the device surface temperature of the device; for a vertical struct |
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Bibliography: | Application Number: CN202310258263 |