Measurement method of nano-micron non-contact in-situ optical thermal characterization technology combination

The invention discloses a measurement method of a nano-micron non-contact in-situ optical thermal characterization technology combination, and the method comprises the steps: employing an infrared thermal imaging mode for the thermal characterization application demands of a wide bandgap semiconduct...

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Bibliographic Details
Main Authors ZHANG BAISHENG, LU XIAOLI, HAO YUE, LI YUAN, HAN CHAO, MA XIAOHUA, HUANG YONG, ZHAO YUANFU, HE YUNLONG
Format Patent
LanguageChinese
English
Published 18.07.2023
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Summary:The invention discloses a measurement method of a nano-micron non-contact in-situ optical thermal characterization technology combination, and the method comprises the steps: employing an infrared thermal imaging mode for the thermal characterization application demands of a wide bandgap semiconductor power device which is large in device size, is not high in measurement precision requirement, and is used for the qualitative evaluation of a main heat source region or thermal failure positioning; for thermal characterization application requirements of small device size, high measurement precision requirement and quantitative characterization of temperature distribution of wide-band-gap and ultra-wide-band-gap semiconductor power devices, a thermal reflection imaging mode and a Raman thermal characterization mode based on nanoparticles are adopted for a transverse structure device to characterize and measure the metal electrode temperature and the device surface temperature of the device; for a vertical struct
Bibliography:Application Number: CN202310258263