Group III nitride multi-wavelength LED array with etch stop layer

• Main Authors: ARMITAGE ROBERT, WILDSEN IWAN
• Format: Patent
• Language: Chinese; English
• Published: 14.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An LED array includes a first mesa including a top surface, at least one first LED including a first p-type layer, a first n-type layer, and a first color active region, and a tunnel junction on the first LED; a second n-type layer on the tunnel junction, the second n-type layer comprising at least one Al molar fraction gt; 10% of an n-type Group III nitride layer and at least one Al molar fraction lt; and 10% of an n-type group III nitride layer. The LED array also includes an adjacent mesa including a top surface, a first LED, a second LED including a second n-type layer, a second p-type layer, and a second color active region. A first trench separates the first mesa and the adjacent mesa, a cathode metallization in the first trench and in electrical contact with the first and second color active regions of the adjacent mesa, and an anode metallization in contact on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods of making the same include thin film tr