Gallium nitride device with grid self-luminous function, preparation method and test method

• Main Authors: YIN YULIAN, HU CUNGANG, TANG XI, CAO WENPING
• Format: Patent
• Language: Chinese; English
• Published: 14.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING; TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES; TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR

The invention discloses a gallium nitride device with a gate self-luminous function, a preparation method and a test method. A gate structure of the gallium nitride device comprises a semitransparent metal layer, a P-type layer, a barrier layer and a channel layer from top to bottom. When forward driving voltage is applied to the grid electrode, electrons and holes are bidirectionally injected into the heterojunction from the channel and the grid electrode metal respectively, part of the electrons and the holes are compounded to generate photons, and the photons penetrate through the semitransparent metal electrode to be emitted out of the grid electrode. In the preparation process of the gate structure of the device, a semitransparent gate metal technology is adopted, a metal layer resistant to plasma etching is used for protecting the gate structure from being etched by plasma, and good light transmission is kept. According to the invention, a related test instrument can capture and analyze electroluminesce