Method for high-yield preparation of high-purity SiC nanowires through layer-by-layer assembly

• Main Authors: KANG PENGCHAO, ZHANG TIEN, WANG PINGPING, WU GAOHUI, JIANG LONGTAO, ZHAO QIQI, WEI ZENGYAN
• Format: Patent
• Language: Chinese; English
• Published: 14.07.2023
• Subjects: CHEMISTRY; COMPOUNDS THEREOF; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention discloses a method for preparing high-purity SiC nanowires with high yield through layer-by-layer assembly, and relates to the field of methods for preparing the high-purity SiC nanowires. The invention aims to solve the problems of complex and harsh synthesis process, long preparation period, high cost, low nanowire purity and low yield of the existing SiC nanowire. The method comprises the following steps: 1, pretreating silicon powder and a carbon substrate; and 2, synthesizing the SiC nanowire. According to the method, the concentration distribution of reaction gas is broken, a large number of high-purity nanowires can be obtained on the graphite substrate, a large number of nanowires can also be obtained at the silicon source position, the nanowires grow at the graphite substrate and the silicon source position, and the yield of the nanowires is remarkably improved. The SiC nanowire prepared by the method has a wide application prospect in the fields of high-temperature ceramics, photoelect