Ultraviolet detector and preparation method thereof

• Main Authors: ZHAO JINGJING, XU YONGKANG, YANG WEIJIA, WEI ZIHENG, WU SUWEI, LIU LIHUA, HE XIN, LIANG CHUANGMING
• Format: Patent
• Language: Chinese; English
• Published: 07.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention provides an ultraviolet detector and a preparation method thereof. The ultraviolet detector comprises an organic substrate layer, a Ga2O3 nanorod array layer and a GaS shell layer which are sequentially arranged, the Ga2O3 nanorod array layer comprises Ga2O3 nanorods, the Ga2O3 nanorods are connected through a Ga2O3 thin film, and quantum dots are distributed on the surface of the GaS shell layer. Wherein the Ga2O3 nanorod array layer and the GaS shell layer form a heterojunction structure, quantum dots are distributed on the surface of the GaS shell layer, the quantum dots have a surface plasmon enhancement effect, finally, the photoelectric response performance of the device is greatly improved, and compared with an existing gallium oxide ultraviolet detector, the photoelectric response performance is improved by 1-2 orders of magnitude. The invention also provides a preparation method of the ultraviolet detector. 本发明提供了一种紫外探测器及其制备方法。本发明的紫外探测器，包括依次设置的有机衬底层、Ga2O3纳米柱阵列层和GaS壳层，所述Ga2O3纳米柱阵列层包括Ga2O