Device and process for synthesizing large-particle (3mm) SiC material

• Main Authors: WANG CHUANYONG, SHENG YONGJIANG, OUYANG PENGGEN, CAO JIANWEI, LI RONGZHEN, HUANG JUN, HU JIANRONG
• Format: Patent
• Language: Chinese; English
• Published: 07.07.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; THEIR RELEVANT APPARATUS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a large-particle (3mm) SiC material synthesis device and process, and belongs to the technical field of SiC preparation, and the large-particle (3mm) SiC material synthesis device comprises a crucible and a carrier assembly. The crucible is provided with a cavity for containing silicon powder and carbon powder, the carrier assembly comprises a fixing part and a carrier part which are made of graphite materials, the fixing part is matched with an opening of the crucible, a hole groove is formed in the fixing part in the direction of the cavity, the carrier part is hung to the hole groove, and the carrier part is arranged in the hole groove. And the silicon powder and the carbon powder extend to the silicon powder and the carbon powder in the cavity. The device can be matched with the process to obtain gt; gt is larger than 3 mm (generally not smaller than 40%), specifically, under the technological conditions, the size of part of the particles can further reach 6 mm or above, and gt; the