Thin film transistor array substrate

• Main Authors: OH SAE-HOON, PARK TAE-HAN, KIM AN-KI
• Format: Patent
• Language: Chinese; English
• Published: 04.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a thin film transistor array substrate, and the thin film transistor array substrate comprises a substrate, a light shielding layer disposed on the substrate, and a thin film transistor disposed to be overlapped with the light shielding layer, the thin film transistor includes a semiconductor layer on a light shielding layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, and a source electrode connected to a first side of the semiconductor layer and a drain electrode connected to a second side of the semiconductor layer, where at least one of the light shielding layer, the gate electrode, the source electrode, and the drain electrode includes a first quantum dot layer. 一种薄膜晶体管阵列基板，该薄膜晶体管阵列基板包括基板、设置在基板上的遮光层、以及设置成与遮光层交叠的薄膜晶体管，其中，薄膜晶体管包括位于遮光层上的半导体层、位于半导体层上的栅极绝缘层、位于栅极绝缘层上的栅极、以及连接到半导体层的第一侧的源极和连接到半导体层的第二侧的漏极，其中，遮光层、栅极、源极和漏极中的至少一者包括第一量子点层。