Memory device and operating method of memory controller controlling same

• Main Authors: CHOI YOUNG-HA, SEO JUN-HO, LEE DO-KYUNG, SON YONG-WAN
• Format: Patent
• Language: Chinese; English
• Published: 04.07.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Disclosed is an operating method of a memory device, in which the memory device includes a memory block including a plurality of cell transistors stacked in a direction perpendicular to a substrate. The plurality of cell transistors may include a ground selection transistor and an erase control transistor. The erase control transistor may be between the substrate and the ground selection transistor. The operating method may include performing a first erase operation on the ground selection transistor; performing a first program operation on the erase control transistor after the first erase operation; performing a second program operation on the ground selection transistor after the first program operation; and, after the second program operation, performing a second erase operation on the erase control transistor. 所公开的是存储器设备的操作方法，其中，存储器设备包括存储器块，存储器块包括在垂直于衬底的方向上堆叠的多个单元晶体管。多个单元晶体管可以包括接地选择晶体管和擦除控制晶体管。擦除控制晶体管可以位于衬底和接地选择晶体管之间。操作方法可以包括：对接地选择晶体管执行第一擦除操作；在第一擦除操作之后，对擦除控制晶体管执行第一编程操作；在第一编程操作之后，对接地选择晶体管执行第二编程操作；以及，在第二编程