Capacitor and DRAM device including same

• Main Authors: SHIN YU-KYUNG, CHO CHUL-JIN, LIM HAN-JIN, JUNG CHANG-HWA, KIM HYUN-JOON
• Format: Patent
• Language: Chinese; English
• Published: 30.06.2023
• Subjects: ELECTRICITY

A capacitor is described. The capacitor includes: a lower electrode; the dielectric layer structure is arranged on the lower electrode; and an upper electrode disposed on the dielectric layer structure. The dielectric layer structure includes a first dielectric layer, a second dielectric layer contacting the first dielectric layer, and a third dielectric layer contacting the second dielectric layer. Each of the first dielectric layer, the second dielectric layer, and the third dielectric layer includes a material having a crystal structure. The second dielectric layer includes an oxide having ferroelectric or antiferroelectric properties, and the second dielectric layer includes a material in which at least two different crystalline phases are mixed. 描述了一种电容器。电容器包括：下电极；介电层结构，设置在下电极上；以及上电极，设置在介电层结构上。介电层结构包括第一介电层、接触第一介电层的第二介电层、以及接触第二介电层的第三介电层。第一介电层、第二介电层和第三介电层中的每一个包括具有晶体结构的材料。第二介电层包括具有铁电或反铁电特性的氧化物，并且第二介电层包括混合了至少两种不同晶相的材料。