Semiconductor laser and preparation method

• Main Authors: WANG JIAN, XU CHANGDA, BAN DECHAO, LI MING, ZHU NINGHUA, JIN YA, BAI JINHUA, CHAN SIU-HONG
• Format: Patent
• Language: Chinese; English
• Published: 30.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention provides a semiconductor laser and a preparation method. The semiconductor laser comprises a substrate; the negative electrode is arranged on the bottom surface of the substrate; the active layer is arranged on the top surface of the substrate; the grating layer and the waveguide layer are arranged on the active layer; the ridge waveguide is arranged on the grating layer and the waveguide layer; the first positive electrode and the second positive electrode are both arranged on the ridge waveguide, the second positive electrode is located above the grating layer, and the second positive electrode is constructed into direct current for applying alternating current and adjusting the working state of the semiconductor laser. A partial grating structure is arranged on the semiconductor laser, an optical feedback structure is arranged below a first positive electrode, and the length of a second electrode is reduced, so that the single mode rate and the anti-reflection characteristic of the laser are