Groove type silicon carbide MOSFET device and preparation process thereof

• Main Authors: ZHU CHENKAI, ZHU YUANZHENG, YANG ZHUO, HUANG XUEQUAN
• Format: Patent
• Language: Chinese; English
• Published: 27.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain elect...