Groove type silicon carbide MOSFET device and preparation process thereof
The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain elect...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
27.06.2023
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Subjects | |
Online Access | Get full text |
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