Groove type silicon carbide MOSFET device and preparation process thereof
The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain elect...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
27.06.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain electrode, a P-type well region is arranged above the N-type epitaxial layer, a high-concentration N-type source electrode and a high-concentration P-type source electrode are arranged on the surface of the P-type well region, and the high-concentration N-type source electrode and the high-concentration P-type source electrode are arranged on the surface of the P-type well region. A longitudinal groove is formed in the surface of the end, away from the high-concentration N-type drain electrode, of the N-type epitaxial layer, polycrystalline silicon is arranged in the longitudinal groove, the periphery of the polycrystalline silicon is wrapped by a gate oxide layer, a P-type doped region is further arranged in the N-type |
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Bibliography: | Application Number: CN202310461968 |