Groove type silicon carbide MOSFET device and preparation process thereof

The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain elect...

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Bibliographic Details
Main Authors ZHU CHENKAI, ZHU YUANZHENG, YANG ZHUO, HUANG XUEQUAN
Format Patent
LanguageChinese
English
Published 27.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain electrode, a P-type well region is arranged above the N-type epitaxial layer, a high-concentration N-type source electrode and a high-concentration P-type source electrode are arranged on the surface of the P-type well region, and the high-concentration N-type source electrode and the high-concentration P-type source electrode are arranged on the surface of the P-type well region. A longitudinal groove is formed in the surface of the end, away from the high-concentration N-type drain electrode, of the N-type epitaxial layer, polycrystalline silicon is arranged in the longitudinal groove, the periphery of the polycrystalline silicon is wrapped by a gate oxide layer, a P-type doped region is further arranged in the N-type
Bibliography:Application Number: CN202310461968