Groove type silicon carbide MOSFET device and preparation process thereof

• Main Authors: ZHU CHENKAI, ZHU YUANZHENG, YANG ZHUO, HUANG XUEQUAN
• Format: Patent
• Language: Chinese; English
• Published: 27.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain electrode, a P-type well region is arranged above the N-type epitaxial layer, a high-concentration N-type source electrode and a high-concentration P-type source electrode are arranged on the surface of the P-type well region, and the high-concentration N-type source electrode and the high-concentration P-type source electrode are arranged on the surface of the P-type well region. A longitudinal groove is formed in the surface of the end, away from the high-concentration N-type drain electrode, of the N-type epitaxial layer, polycrystalline silicon is arranged in the longitudinal groove, the periphery of the polycrystalline silicon is wrapped by a gate oxide layer, a P-type doped region is further arranged in the N-type