Groove type silicon carbide MOSFET device and preparation process thereof
The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain elect...
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Format | Patent |
Language | Chinese English |
Published |
27.06.2023
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Abstract | The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain electrode, a P-type well region is arranged above the N-type epitaxial layer, a high-concentration N-type source electrode and a high-concentration P-type source electrode are arranged on the surface of the P-type well region, and the high-concentration N-type source electrode and the high-concentration P-type source electrode are arranged on the surface of the P-type well region. A longitudinal groove is formed in the surface of the end, away from the high-concentration N-type drain electrode, of the N-type epitaxial layer, polycrystalline silicon is arranged in the longitudinal groove, the periphery of the polycrystalline silicon is wrapped by a gate oxide layer, a P-type doped region is further arranged in the N-type |
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AbstractList | The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type drain electrode and drain electrode metal, a low-concentration N-type epitaxial layer is arranged on the high-concentration N-type drain electrode, a P-type well region is arranged above the N-type epitaxial layer, a high-concentration N-type source electrode and a high-concentration P-type source electrode are arranged on the surface of the P-type well region, and the high-concentration N-type source electrode and the high-concentration P-type source electrode are arranged on the surface of the P-type well region. A longitudinal groove is formed in the surface of the end, away from the high-concentration N-type drain electrode, of the N-type epitaxial layer, polycrystalline silicon is arranged in the longitudinal groove, the periphery of the polycrystalline silicon is wrapped by a gate oxide layer, a P-type doped region is further arranged in the N-type |
Author | ZHU CHENKAI YANG ZHUO ZHU YUANZHENG HUANG XUEQUAN |
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DocumentTitleAlternate | 一种沟槽型碳化硅MOSFET器件及其制备工艺 |
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Snippet | The invention provides a trench type silicon carbide MOSFET device and a preparation process thereof, the MOSFET device comprises a high-concentration N-type... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Groove type silicon carbide MOSFET device and preparation process thereof |
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