Ultralow-temperature universal preparation method of two-dimensional crystal material

• Main Authors: ZHANG LIJIE, ZHAO MEI, SHE YIHONG, ZHANG KENAN
• Format: Patent
• Language: Chinese; English
• Published: 27.06.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses an ultralow-temperature universal preparation method of a two-dimensional crystal material, and belongs to the technical field of semiconductor materials. The method comprises the following steps: taking lead iodide, bismuth iodide, indium iodide, cobalt iodide, ferrous iodide, tin iodide, chromium iodide, cuprous iodide, manganese iodide, zinc iodide, nickel iodide, platinum iodide and antimony iodide as precursors, and taking elemental sulfur, elemental selenium and elemental tellurium as raw materials. The preparation method comprises the following steps: firstly, preparing a two-dimensional crystal material of lead iodide, bismuth iodide, indium iodide, cobalt iodide, ferrous iodide, tin iodide, chromium iodide, cuprous iodide, manganese iodide, zinc iodide, nickel iodide, platinum iodide and antimony iodide on a substrate through a physical vapor deposition method; iodine atoms in the two-dimensional iodide two-dimensional crystal material are replaced by sulfur atoms, selenium at