Microelectronic devices having layered stacks with different column densities and related methods and systems

• Main Authors: DENG KEXI, KEWLEY DAVID A, ZHANG XIAOSONG, ZHU CHAO, YANG ZHIWEI, OLSON ADAM L, ISLAM MD MUSTAFA, ULLAH MOHAMED ZAKARIA, TRAN THUAN MINH QUOC, CARLSON MERRI L, ZHANG HUIQIN
• Format: Patent
• Language: Chinese; English
• Published: 23.06.2023
• Subjects: ELECTRICITY

A microelectronic device includes a lower stack and an upper stack, each including a stack structure having a vertically alternating sequence of insulating structures and conductive structures arranged in a stack. A lower array of pillars extends through the stacked structure of the lower stack, and an upper array of pillars extends through the stacked structure of the upper stack. The pillars in the lower array are aligned with the pillars in the upper array along an interface between the lower stack and the upper stack. The column density of the columns in the lower array differs from the column density of the columns in the upper array at least at the elevation of the base comprising the columns, the "column density" being the number of columns per unit horizontal region of the respective array. Related methods and electronic systems are also disclosed. 微电子装置包含下部叠组和上部叠组，所述下部叠组和所述上部叠组各自包括堆叠结构，所述堆叠结构具有布置成叠层的绝缘结构和导电结构的竖直交替序列。柱的下部阵列延伸穿过所述下部叠组的所述堆叠结构，且柱的上部阵列延伸穿过所述上部叠组的所述堆叠结构。所述下部阵列中的所述柱沿着所述下部叠组与所述上部叠组之间的界面与所述上部