Epitaxial wafer cleaning method

The present invention is a method for cleaning an epitaxial wafer for cleaning a wafer having an epitaxial film formed on the front surface thereof, the method comprising: a first cleaning step in which a cleaning solution containing O3 is supplied to all of the front surface, the back surface, and...

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Bibliographic Details
Main Authors MASUMURA HISASHI, NAKATA TEPPEI, TANAKA NORIMICHI, FUKATSU YUHEI
Format Patent
LanguageChinese
English
Published 23.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention is a method for cleaning an epitaxial wafer for cleaning a wafer having an epitaxial film formed on the front surface thereof, the method comprising: a first cleaning step in which a cleaning solution containing O3 is supplied to all of the front surface, the back surface, and the end surface of the wafer to perform rotary cleaning; a second cleaning step in which, after the first cleaning step, a cleaning liquid is supplied to the back surface and the end surface of the wafer, and the wafer is cleaned by a roller-type brush; a third cleaning step in which, after the second cleaning step, a cleaning solution containing O3 is supplied to the front surface of the wafer to perform rotary cleaning; and a fourth cleaning step in which, after the third cleaning step, a cleaning solution containing HF is supplied to the front surface of the wafer to perform rotary cleaning. As a result, provided is a method for cleaning an epitaxial wafer, which is performed after an epitaxial film is formed, a
Bibliography:Application Number: CN202180067367