METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: HAN KYU-BIN, OH HEUNG-SUK, KIM SANG-WOOK
• Format: Patent
• Language: Chinese; English
• Published: 23.06.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor device using a curvilinear optical proximity correction (OPC) method is provided. The method of manufacturing a semiconductor device includes: performing an OPC step on a layout to generate a correction pattern, the correction pattern having a curved shape; performing a mask rule check (MRC) step on the correction pattern to generate mask data; and forming a photoresist pattern on the substrate using a photomask manufactured based on the mask data. The MRC step includes: generating a width skeleton in the correction pattern; generating a width profile from the width skeleton, the width profile satisfying the specification for the line width of the mask rule; and adding the correction pattern and the width profile to generate an adjustment pattern. 提供了一种使用曲线光学邻近校正(OPC)方法来制造半导体器件的方法。制造半导体器件的方法包括：对布局执行OPC步骤以生成校正图案，校正图案具有曲线形状；对校正图案执行掩模规则检查(MRC)步骤以生成掩模数据；以及使用基于掩模数据制造的光掩模在基板上形成光致抗蚀剂图案。MRC步骤包括：在校正图案中生成宽度骨架；从宽度骨架生成宽度轮廓，该宽度轮廓满足掩模规则的用于线宽的规格；以及将校正图案和宽度轮廓相加以生成调整图案。