Hydrogen sensor based on ZnO/In < 2 > O < 3 > heterostructure and preparation method thereof

• Main Authors: YAN ZHAONAN, SUN HAO, LIU SHUHAI, YAO YACHI, QIN YONG, XU QI
• Format: Patent
• Language: Chinese; English
• Published: 23.06.2023
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention discloses a hydrogen sensor based on a ZnO/In2O3 heterostructure. The hydrogen sensor comprises a substrate, a dielectric layer and a gas sensing layer, wherein the dielectric layer is arranged on the substrate, the gas induction layer is arranged on the dielectric layer, the dielectric layer comprises high work function metal, and the gas induction layer comprises a ZnO/In2O3 heterostructure nanowire film and an electrode. The device prepared by the preparation method provided by the invention can obtain a lower detection lower limit, and a feasible new method is provided for ppb-level hydrogen sensing. 本申请所述的一种基于ZnO/In2O3异质结构的氢气传感器，包括基底、介质层、气体感应层；其中，所述介质层设置在所述基底上，所述气体感应层设置在所述介质层上，所述介质层包含高功函数金属，所述气体感应层包括ZnO/In2O3异质结构纳米线膜和电极。通过本申请所述制备方法制得的器件，能够获得更低的探测下限，为ppb级氢气传感提供了一种切实可行的新方法。