DRAM with fast random row refresh for row hammer mitigation

• Main Authors: HARTLEY DANIEL, VANDERVEEN VINCENT, DASHTIPOL BHARAT, SAIFUDDIN MOSADDIQ, DESHMUKH PRASHANT
• Format: Patent
• Language: Chinese; English
• Published: 13.06.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A DRAM memory controller is provided that identifies a flag command that points to a given row in the DRAM. If a threshold probability is satisfied in response to identifying the flag command, the DRAM memory controller commands the DRAM to refresh adjacent rows in the DRAM. The adjacent row may be adjacent to a given row or a most recently closed row. 提供标识标记命令的DRAM存储器控制器，该标记命令指向DRAM中的给定行。如果响应于标识到标记命令而满足阈值概率，则DRAM存储器控制器命令DRAM刷新DRAM中的相邻行。该相邻行可以与给定行或最近关闭的行相邻。