Inorganic-organic hybrid nanopore thin film resistive random access memory and preparation method thereof

• Main Authors: WU DI, LIU CHANG, LEI JIN, SUN SONG, LI AIDONG
• Format: Patent
• Language: Chinese; English
• Published: 13.06.2023
• Subjects: ELECTRICITY

The invention discloses an inorganic-organic hybrid nanopore thin film resistive random access memory with a multilevel storage function, which belongs to the field of semiconductor microelectronic devices and structurally comprises a substrate, an active electrode, a resistive functional layer and an inert electrode from bottom to top in sequence, and the resistive function layer is made of an inorganic-organic hybrid nano porous film material. The inorganic-organic hybrid nanopore thin film resistive random access memory with a multilevel storage function is prepared by utilizing molecular layer deposition and atomic layer deposition technologies, and the adopted molecular layer deposition and atomic layer deposition technologies can be compatible with a microelectronic process and are suitable for large-scale integration. 本发明公开了一种具有多级存储功能的无机-有机杂化纳孔薄膜阻变存储器，属于半导体微电子器件领域，本发明的阻变存储器结构从下往上依次为衬底、活性电极、阻变功能层、惰性电极；所述阻变功能层为无机-有机杂化纳米多孔薄膜材料。本发明利用分子层沉积和原子层沉积技术来制备具有多级存储功能的无机-有机杂化纳孔薄膜阻变存储器，所采用的分子层沉积和原子层沉积技术能够与微电子工艺兼容、适合大规