Reverse blocking double-end solid-state thyratron, trigger circuit thereof and preparation method of reverse blocking double-end solid-state thyratron

• Main Authors: QING ZHENGHENG, LIANG LIN
• Format: Patent
• Language: Chinese; English
• Published: 06.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a reverse blocking double-end solid-state thyratron and a trigger circuit and a preparation method thereof, and belongs to the field of thyratrons, the reverse blocking double-end solid-state thyratron comprises an N + silicon carbide emitter used as an anode, and a silicon carbide P-drift region, a silicon carbide N drift region, a silicon carbide P + emitter region and a silicon carbide N + emitter region which are obtained by epitaxial growth on the N + silicon carbide emitter in sequence, the silicon carbide P + emitter region and the silicon carbide N + emitter region are located on different planes but parallel to each other, are alternately connected to form a continuous square concave-convex surface, and are jointly used as a cathode. The invention further provides a preparation method of the reverse blocking double-end solid-state thyratron and a trigger circuit of the reverse blocking double-end solid-state thyratron. The thyratron device has the high voltage blocking capabili