Light emitting diode chip

• Main Authors: WANG HUINING, XIA HONGWEI, ZHUO JIALI, LIN SUHUI, MA QUANYANG, SHI WEIBIN, ZHANG ZHONGYING, YANG RENLONG
• Format: Patent
• Language: Chinese; English
• Published: 02.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a light-emitting diode chip, which comprises a substrate, a semiconductor light-emitting sequence layer, a first electrode and a second electrode, and is characterized in that the first electrode is electrically connected with a first conductive type semiconductor layer; the first electrode comprises a reflecting layer, the reflecting layer comprises a plurality of pairs of repeated laminated layers consisting of Al metal and Ti metal layers, and the thicknesses of the Al metal layers/Ti metal layers in the reflecting layer are sequentially reduced from the light-emitting side of the light-emitting diode chip to the electrode side. The light emitting efficiency of the light emitting diode chip can be improved. 本发明涉及一种发光二极管芯片，包括衬底、半导体发光序列层、第一电极和第二电极，所述第一电极电连接第一导电型半导体层；所述第一电极包括反射层,所述反射层包括Al金属、Ti金属层组成的多对重复叠层，所述反射层中的Al金属层/Ti金属层的厚度从发光二极管芯片出光侧往电极侧方向依序减小。本发明可以增加发光二极管芯片的出光效率。