Thin film transistor and preparation method thereof

• Main Authors: LUO JIE, SUN HONGBO, HAN BAODONG
• Format: Patent
• Language: Chinese; English
• Published: 02.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The thin film transistor comprises at least one thin film transistor unit, the thin film transistor unit at least comprises a grid electrode composite layer and an active layer which are arranged on a substrate, the active layer comprises a first part and a second part which are connected with each other, the first part extends along a first direction, and the second part extends along a second direction. The first portion extends along a first direction, the second portion extends along a second direction, the first direction is different from the second direction, the second direction is not parallel to the plane where the substrate is located, the first portion is arranged on the side, away from the substrate, of the gate composite layer in a stacked mode, a first via hole is formed in the gate composite layer, and a second via hole is formed in the second portion. At least part of the second part is arranged in the first via hole, and a channel is formed in the part, opposite to the side wall of the gate